MTech Vlsi Design syllabus for 1 Sem 2018 scheme 18EMS13

Module-1 Module-1 10 hours

MOS Transistor Theory:

MOS Transistors, CMOS Fabrication and Layout,Long – Channel I-V Characteristics, C-V Characteristics, Non-ideal I-V Effects, DC Transfer Characteristics, Pitfalls and Fallacies.

 

CMOS Processing Technology:

Introduction, CMOS Technologies, Layout Design Rules, CMOS Process Enhancements.

Module-2 Module-2 10 hours

Combinational Circuit Design:

Introduction, Circuit Families, Circuit Pitfalls, More Circuit Families, Silicon-on-Insulator Circuit Design, Subthreshold Design, Pitfalls and Fallacies, Historical Perspective.

A d v e r t i s e m e n t
Module-3 Module-3 10 hours

Sequential Circuit Design:

Introduction, Sequencing Static Circuits, Circuit Design of Latches and Flip-flops, Static Sequencing Element Methodology, Sequencing Dynamic Circuits, Synchronizers, Wave Pipelining, Pitfalls and Fallacies, Case study

Module-4 Module-4 10 hours

Single Stage Amplifiers:

Basic Concepts, Common – Source Stage, Source Follower, Common – Gate Stage, Cascode Stage, Choice of Device Models.

 

Differential Amplifiers:

Single – Ended and Differential Operations, Basic Differential Pair, Common – Mode Response, Differential Pair with MOS Loads, Gilbert Cell.

Module-5 Module-5 10 hours

Passive and Active Current Mirrors:

Basic Current Mirrors, Cascode Current Mirrors, Active Current Mirrors.

 

Operational Amplifiers:

General Considerations, One – Stage Op Amps, Two – Stage Op Amps, Gain Boosting, Comparison, Common – Mode Feedback, Input Range Limitations, Slew Rate, Power Supply Rejection, Noise in Op Amps