10EC764 Radio Frequency Integrated Circuits syllabus for EC


Part A
Unit-1 OVERVIEW OF WIRELESS PRINCIPLES,PASSIVE RLC NETWORKS 7 hours

OVERVIEW OF WIRELESS PRINCIPLES: A brief history of wirelesssystems, Noncellular wireless applications, Shannon, Modulations & Alphabet Soup, Propagation.3 Hrs PASSIVE RLC NETWORKS: Introduction, Parallel RLC Tank, Series RLC Networks, Other RLC networks, RLC Networks as impedance Transformers.4 Hrs

Unit-2 CHARACTERISTICS OF PASSIVE IC COMPONENTS 6 hours

Introduction,Interconnect at radio frequencies: Skin effect, resisters, Capacitors, Inductors, Transformers, Interconnect options at high frequency.

Unit-3 A REVIEW OF MOS DEVICE PHYSICS,DISTRIBUTED SYSTEMS 7 hours

A REVIEW OF MOS DEVICE PHYSICS: Introduction, A little history, FETs, MOSFET physics, The long – channels approximation, operation in weak inversion (sub threshold), MOS device physics in the short – channel regime, Other effects.3 Hrs DISTRIBUTED SYSTEMS: Introduction, Link between lumped and distributed regimes driving-point impedance of iterated structures, Transmission lines in more detail, Behavior of Finite – length transmission lines, summary of transmission line equations, artificial lines.4 Hrs

Unit-4 THE SMITH CHART AND S-PARAMETERS 6 hours

Introduction, The smith chart, S-parameters, Band Width Estimation Techniques, Introduction, The method of open – circuit time constant, The method of short circuit time constant, Risetime, Delay and bandwidth.

Part B
Unit-5 HIGH FREQUENCY AMPLIFIER DESIGN 7 hours

Introduction, Zeros as bandwidth Enhancers, The shunt –series amplifier, Bandwidth Enhancement with fT Doublers, Tuned amplifiers, Neutralization and unilateralization, Cascaded amplifiers, AM – PM conversion.

Unit-6 VOLTAGE REFERENCES AND BIASING 6 hours

Introduction, Review of diode behavior, Diodes and bipolar transistors in CMOS technology, Supply–independent bias circuits, Bandgap voltage reference, Constant gm bias. Noise: Introduction, Thermal noise, Shot noise, Flicker noise, Popcorn noise, Classical two- port noise theory, Examples of noise calculations, A handy rule of thumb, Typical noise performance.

Unit-7 LOW NOISE AMPLIFIER DESIGN 7 hours

Introduction, Derivation of intrinsic MOSFET two-port noise parameters, LNA topologies: Power match versus noise match, Power-constrained noise optimization, Design examples,linearity and large signal performance, Spurious – free Dynamic range. Mixers: Introduction, Mixer fundamental, Nonlinear systems as linear mixers.

Unit-8 Multiplier – based mixers 7 hours

Multiplier – based mixers, Sub sampling mixers, Diode ring mixers, RF power amplifiers, Introduction, general considerations, Class A, AB, B and C power amplifier, Class D amplifiers, Class E amplifiers Class F amplifiers, Modulation of power amplifiers, summary of PA characteristics, RF PA design examples, additional design considerations, Design summery.

Last Updated: Tuesday, January 24, 2023