06EE766 VLSI Circuits and Design syllabus for EE


Part A
Unit-1 A Review of Microelectronic 3 and an introduction to mos technology 6 hours

Introduction to integrated circuit technology, Production of E-beam masks. Introduction, VLSI technologies, MOS transistors, fabrication, thermal aspects, production of E-beam masks.

Unit-2 Basic Electrical properties of mos an bicmos circuit 8 hours

Rain to source current Ids versus Vds relationships-BICMOS latch up susceptibility. MOS transistor characteristics, figure of merit, pass transistor NMOS and COMS inverters, circuit model, latch up.

Unit-3 Mos and bicmos circuit design PROCESSES 8 hours

Mass layers, strick diagrams, design, symbolic diagrams

Unit-4 Basic circuit CONCEPTS 6 hours

Sheet resistance, capacitance layer inverter delays, wiring capacitance, choice of layers.

Part B
Unit-5 Scaling of mos CIRCUITS 8 hours

Scaling model and scaling factors- Limit due to current density.

Unit-6 Subsystem design and layout 8 hours

Some architecture issues- other systems considerations. Examples of structural design, clocked sequential circuits

Unit-7 Subsystem design processes 4 hours

Some general considerations, an Illustration of design process, observations

Unit-8 Illustration of the design process 4 hours

Observation on the design process, Regularity Design of an ALU subsystem. Design of 4-bit adder, implementing ALU functions.

Last Updated: Tuesday, January 24, 2023