10EE764 VLSI Circuits and Design syllabus for EE


Part A
Unit-1 A REVIEW OF MICROELECTRONICS AND AN INTRODUCTION TO MOS TECHNOLOGY 6 hours

Introduction to integrated circuit technology. Introduction, VLSI technologies, MOS transistors, fabrication, thermal aspects, production of E-beam masks.

Unit-2 BASIC ELECTRICAL PROPERTIES OF MOS AND BICMOS CIRCUIT 8 hours

Drain to source current Ids versus Vds relationships-BICMOS latch up susceptibility. MOS transistor characteristics, figure of merit, pass transistor NMOS and COMS inverters, circuit model, latch up in CMOS circuits.

Unit-3 MOS AND BICMOS CIRCUIT DESIGN PROCESSES 8 hours

MOS layers, stick diagrams, design, symbolic diagrams.

Unit-4 BASIC CIRCUIT CONCEPTS 6 hours

Sheet resistance, capacitance layer inverter delays, wiring capacitance, choice of layers.

Part B
Unit-5 SCALING OF MOS CIRCUITS 8 hours

Scaling model and scaling factors- Limitations due to current density.

Unit-6 SUBSYSTEM DESIGN AND LAYOUT 8 hours

Architectural issues, systems considerations. Examples of structural design, clocked sequential circuits.

Unit-7 SUBSYSTEM DESIGN PROCESSES 4 hours

General considerations, illustration of design process, observations.

Unit-8 ILLUSTRATION OF THE DESIGN PROCESS 4 hours

Observation on the design process, Regularity Design of an ALU subsystem. Design of 4-bit adder, implementation of ALU functions.

Last Updated: Tuesday, January 24, 2023