17EC33 Analog Electronics syllabus for TE



A d v e r t i s e m e n t

Module-1 BJT AC Analysis 10 hours

BJT AC Analysis: BJT Transistor Modeling, The re transistor model, Common emitter fixed bias, Voltage divider bias, Emitter follower configuration. Darlington connection- DC bias; The Hybrid equivalent model, Approximate Hybrid Equivalent Circuit- Fixed bias, Voltage divider, Emitter follower configuration; Complete Hybrid equivalent model, Hybrid π Model. L1, L2,L3

Module-2 Field Effect Transistors 10 hours

Field Effect Transistors: Construction and Characteristics of JFETs, Transfer Characteristics, Depletion type MOSFET, Enhancement type MOSFET.

FET Amplifiers: JFET small signal model, Fixed bias configuration, Self bias configuration, Voltage divider configuration, Common Gate configuration. Source- Follower Configuration, Cascade configuration. L1, L2, L3

Module-3 BJT and JFET Frequency Response 10 hours

BJT and JFET Frequency Response: Logarithms, Decibels, Low frequency response – BJT Amplifier with RL, Low frequency response-FET Amplifier, Miller effect capacitance, High frequency response – BJT Amplifier, High frequency response-FET Amplifier, Multistage Frequency Effects. L1, L2, L3

Module-4 Feedback and Oscillator Circuits 10 hours

Feedback and Oscillator Circuits: Feedback concepts, Feedback connection types, Practical feedback circuits, Oscillator operation, FET Phase shift oscillator, Wien bridge oscillator, Tuned Oscillator circuit, Crystal oscillator, UJT construction, UJT Oscillator. L1,L2, L3

Module-5 Power Amplifiers 10 hours

Power Amplifiers: Definition and amplifier types, Series fed class A amplifier, Transformer coupled class A amplifier, Class B amplifier operation and circuits, Amplifier distortion, Class C and Class D amplifiers.

Voltage Regulators: Discrete transistor voltage regulation - Series and Shunt Voltage regulators. L1, L2, L3

Last Updated: Tuesday, January 24, 2023